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irsm836 - 045ma 1 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 4 a, 500v integrated power module for small appliance motor drive applications description irsm836 - 045ma is a 4 a, 50 0v integrated power module (ipm) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. ir's technology offers an extremely compact, high performance ac motor - driver in an isolated package. this advanced ipm offer s a combination of ir's low r ds(on) trench mosfet technology and the industry benchmark 3 - phase high voltage, rugged driver in a small pqfn package. at only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surface - mou nt package makes it suitable for applications that are space - constrained. integrated over - current protection, fault reporting and under - voltage lockout functions deliver a high level of protection and fail - safe operation. irsm836 - 045ma functions without a heat sink. features ? integrated gate drivers and bootstrap functionality ? open - source for leg - shunt current sensing ? protection shutdown pin ? low r ds(on) trench fredfet ? under - voltage lockout for all channels ? matched propagation delay for all channels ? optimized dv/dt for loss and emi trade offs ? 3.3v schmitt - triggered active high input logic ? cross - conduction prevention logic ? motor power range up to ~ 130 w, without heat sink ? isolation 1500vrms min base part number package type standard pack orderable part number form quantity irsm836 - 045ma 37l pqfn 12 x 12 mm tape and reel 2000 irsm836 - 045ma tr tray 800 irsm836 - 045ma all part numbers are pbf photo shown is generic. refer to final pages of datasheet for accurate module drawings irsm836 - 045ma
irsm836 - 045ma 2 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 internal electrical schematic IRSM836-045MA 600v 3-phase driver hvic vcc hin1 hin2 hin3 lin1 lin2 lin3 fault itrip en vb1 vb2 vb3 v+ vss u, vs1 v, vs2 w, vs3 rcin vru com vrv vrw absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturing. all voltage parameters are absolute voltages referenced to vss unless otherwise stated in the table. symbol description min max unit bv dss mosfet blocking voltage --- 500 v i o @ t=25c dc output current per mosfet --- 4 a i op pulsed output current (note 1) --- 35 p d @ t c =25c maximum power dissipation per mosfet --- 24 w v iso isolation voltage (1min) (note 2) --- 1500 v rms t j operating junction temperature -40 150 c t l lead temperature (soldering, 30 seconds) --- 260 c t s storage temperature -40 150 c v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage - 0.3 500 v v cc low side and logic supply voltage - 0.3 20 v v in input voltage of lin, hin, i trip , en, rcin, flt v ss - 0.3 v cc +0.3 v note 1: pulse width = 100s, tc =25c, duty=1%. note 2: characterized, not tested at manufacturing
irsm836 - 045ma 3 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 recommended operating conditions symbol description min max unit v+ positive dc bus input voltage --- 4 0 0 v v s1,2,3 high s ide floating s upply offset v oltage ( note 3) 4 0 0 v v b1,2,3 high side f loating supply v oltage v s +12 v s +20 v v cc low side and l ogic s upply v oltage 1 3.5 16.5 v v in input v oltage of lin, hin, i t rip , en, flt 0 5 v f p pwm carrier frequency --- 2 0 khz the input/output logic diagram is shown in figure 1. for proper operation the module should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential . note 3 : logic operational for v s from com - 5v to com+ 250 v. logic state held for v s from com - 5v to com -v bs . static electrical characteristics (v cc - com) = (v b -v s ) = 15 v. t a = 25 o c unless otherwise specified. the v in and i in parameters are referenced to v ss and are applicable to all six channels. the v ccuv parameters are referenced to v ss . the v bsuv parameters are referenced to v s . symbol description min typ max units conditions bv dss drain -to - source breakdown voltage 500 --- --- v t j =25c , i lk =250 a i lkh leakage current of high side fet?s in parallel 10 a t j =25c , v ds =500v i lkl leakage current of low side fet?s in parallel plus gate drive ic 15 a t j =25c , v ds =500v r ds(on) drain to source on resistance --- 1.5 1. 7 t j =25c, v cc =15 v , id = 2a v in,th+ positive g oing i nput t hreshold 2.5 --- --- v v in,th - negative g oing input t hreshold --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs s upply u nder -v oltage, positive going t hreshold 8 8.9 9.8 v v ccuv - , v bsuv - v cc and v bs supply u nder -v oltage, negative going t hreshold 7.4 8.2 9 v v ccuvh, v bsuvh v cc and v bs s upply u nder -v oltage l ock -o ut h ysteresis --- 0.7 --- v i qbs quiescent v bs s upply c urrent v in =0v --- --- 125 a i qcc quiescent v cc s upply c urrent v in =0v --- --- 3.35 ma i qcc , on quiescent v cc s upply c urrent v in = 4 v --- --- 10 ma i in+ input b ias c urrent v in = 4 v --- 100 160 a i in - input bias c urrent v in =0v --- -- 1 a i trip+ i trip b ias c urrent v itrip = 4 v --- 5 40 a i trip - i trip b ias c urrent v itrip =0v --- -- 1 a v it, th+ i trip t hreshold voltage 0.37 0.46 0.55 v v it, th - i trip t hreshold voltage --- 0.4 --- v v it, hys i trip input hysteresis --- 0. 06 --- v
irsm836 - 045ma 4 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 r br internal bootstrap e quivalent resistor value --- 200 --- t j =25c v rcin,th rcin p ositive g oing t hreshold --- 8 --- v r on,fault fault open - drain r esistance --- 50 100 note 4: characterized, not tested at manufacturing dynamic electrical characteristics (v cc - com) = (v b -v s ) = 15 v. t a = 25 o c unless otherwise specified. symbol description min typ max units conditions t on input to output p ropagation t urn -o n d elay t ime --- 0.8 1.5 s i d =1 m a, v + =50v see f ig. 2 t off input to output propagation turn - off delay t ime --- 0.8 1.5 s t f il,in input filter time (hin, lin) 2 00 3 6 0 --- ns v in =0 & v in = 4 v t f il,en input filter time ( en ) 200 360 --- ns v in =0 & v in = 4 v t blt - itrip i trip blanking time 2 00 3 6 0 ns v in =0 & v in =4v, v i/trip =5v t f au lt itrip to fault --- 600 950 ns v in =0 & v in = 4 v t en en falling to s witch t urn -o ff 680 950 ns v in =0 & v in = 4 v t itrip i trip to switch turn - off p ropagation d elay --- 900 1200 ns i d =1a, v + =50v , s ee f ig ure 3 mosfet avalanche c haracteristics symbol description min typ max units conditions eas single pulse avalanche energy --- 209 --- mj t j =25c, l= 9.53 mh, vdd= 1 5 0v, i test = 6.7 a thermal and mechanical characteristics symbol description min typ max units conditions r th(j - c t ) total thermal r esistance junction to case top (note 5) --- 25 --- c/w one device r th(j - c b ) total thermal r esistance junction to case bottom (note 5) --- 1.7 --- c/w one device note 5: calculated
irsm836 - 045ma 5 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 qualification information ? qualification level industrial ?? (per jedec jesd 47e) moisture sensitivity level msl3 ??? (per ipc/jedec j - std - 020c) esd machine model class b (per jedec standard jesd22 - a115) human body model class 2 (per standard esda/jedec js -001- 2012) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/ ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information. ??? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information.
irsm836 - 045ma 6 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 input/output pin equivalent circuit diagrams esd diode esd diode v b ho v s esd diode esd diode lo com 600 v 20 v clamp 25 v clamp v cc esd diode esd diode v cc rcin or fault v ss esd diode esd diode v cc hin , lin , or en v ss 33k 20 v clamp esd diode esd diode v cc itrip v ss 1m
irsm836 - 045ma 7 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 input - output logic level table gate driver ic v+ u, v, w lo ho hin1,2, 3 lin1,2,3 en itrip hin1,2,3 lin1,2,3 u,v,w 1 0 1 0 v+ 1 0 0 1 0 1 0 0 0 off 1 1 x x off 0 x x x off figure 1 : input/output logic diagram i trip u , v , w lin 1 , 2 , 3 hin 1 , 2 , 3
irsm836 - 045ma 8 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 figure 2a : input to output propagation turn - on delay time. figure 2b : input to output propagation turn - off delay time. figure 2c : diode reverse recovery. figure 2 : switching parameter definitions 50 % h in / l in v ds i d h in / l in t off t f 10% i d 50% v ce v ds i d h in / l in t on t r 50% h in /l in 90% i d 10% i d 50% v ds 90% i d v ds i f h in / l in t rr i rr
irsm836 - 045ma 9 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 figure 3 : i trip timing waveform i trip lin 1 , 2 , 3 hin 1 , 2 , 3 t flt - clr 50 % 50 % u , v , w 50 % t itrip 50 %
irsm836 - 045ma 10 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 module pin - out description pin name description 1 hin3 logic input for high side gate driver - phase 3 2 lin1 logic input for low side gate driver - phase 1 3 lin2 logic input for low side gate driver - phase 2 4 lin3 logic input for low side gate driver - phase 3 5 /flt fault output pin 6 i trip over - current protection pin 7 en enable pin 8 rcin reset programming pin 9, 40 vss, com ground for gate drive ic and low side gate drive return 10, 11, 31, 38 u, vs1 output 1, high side floating supply offset voltage 12, 13 vr1 phase 1 low side fet source 14, 15 vr2 phase 2 low side fet source 16, 17, 39 v, vs2 output 2, high side floating supply offset voltage 18, 19, 20 w, vs3 output 3, high side floating supply offset voltage 21, 22 vr3 phase 3 low side fet source 23-30 v+ dc bus voltage positive 32 vb1 high side floating supply voltage 1 33 vb2 high side floating supply voltage 2 34 vb3 high side floating supply voltage 3 35 vcc 15v supply 36 hin1 logic input for high side gate driver - phase 1 37 hin2 logic input for high side gate driver - phase 2 note s pin s 38 and 39 are not required to be co nnected electrically on the pcb all pins with the same name are connected internally. thus, pins 10, 11, 31 and 38 are internally connected 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 30 29 28 31 32 33 34 35 36 37 38 39 40 top view
irsm836 - 045ma 11 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 fault reporting and programmable fault clear timer the irsm836 - 045ma provides an integrated fault reporting output and an adjustable fault clear timer. there are two situations that would cause the irsm836 - 045ma to report a fault via the fault pin. the first is an under - voltage condition of v cc and the second is when the itrip pin recognizes a fault. once the fault condition occurs, the fault pin is internally pulled to v ss and the fault clear timer is activated. the fault output stays in the low state until the fault condition has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the fault pin will return to v cc . the length of the fault clear time period (t fltclr ) is determined by exponential charging characteristics of the capacitor wh ere the time constant is set by r rcin and c rcin . in figure 4 where we see that a fault condition has occurred (uvlo or itrip), rcin and fault are pulled to v ss , and once the fault has been removed, the fault clear timer begins. figure 5 shows that r rcin is connected between the v cc and the rcin pin, while c rcin is placed between the rcin and v ss pins. figure 4 : rcin and fault pin waveforms figure 5 : programming the fault clear timer the design guidelines for this network are shown in table 1 . c rcin 1 nf ceramic r rcin 0.5 m to 2 m >> r on,rcin table 1 : design guidelines the length of the fault clear time period can be determined by using the formula below. ? ? 1 ? cc th rcin rcin rcin fltclr v v c r t , 1 ln v cc v rcin time v rcin , th t fltclr v ss v fault time v ss itrip high impedance state v cc hin ( x 3 ) rcin en itrip v ss fault vrx lin ( x 3 ) v b ( x 3 ) v s ( x 3 ) irsm836 - 045ma i - r rcin c rcin
irsm836 - 045ma 12 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 typical application connection irsm836 - 045ma IRSM836-045MA hvic vcc hin1 hin2 hin3 lin1 lin2 lin3 fault itrip en vb1 vb2 vb3 u, vs1 v, vs2 w, vs3 rcin power supply pwmwh pwmvh pwmuh pwmvl pwmwl gatekill ain1 ifb+ ifb- ifbo vss vdd vddcap xtal0 xtal1 ain2 spd-ref vss com vbus irmck171 pwmul 4.87k 2m 2m 1nf 0.5 6.04k 6.04k 7.68k 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling betwee n vcc - vss and vb1,2,3 - vs1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1f, are recommended. 3. value of the boot - strap capacitors depe nds upon the switching frequency. their selection should be made based on application note an - 1044. 4. pwm generator must be disabled within fault duration to guarantee shutdown of the system. over - current condition must be cleared before resuming operation.
irsm836 - 045ma 13 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 current capability in a t ypical application figure 6 shows the current capability for this module at specified conditions. the current capability of the module is affected by application conditions including the pcb layout, ambient temperature, maximum pcb temperature, modulation scheme, pcb copper thickness and so on. the curves below were obtained from measurements carried out on the irmcs1471 x _r4 - 1 reference design board which includes the irsm836 - 045ma and ir?s irmck171 digital c ontrol ic. figure 6 : maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =32 0 v, pf=0.9 8 0 100 200 300 400 500 600 6 8 10 12 14 16 18 20 rms current (ma) carrier frequency (khz) 320v, ?tca = 70 1oz, 3p 1oz, 2p 0 50 100 150 200 250 300 350 400 6 8 10 12 14 16 18 20 rms current (ma) carrier frequency (khz) 320v, ?tca = 40 1oz, 3p 1oz, 2p
irsm836 - 045ma 14 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 pcb example figure 7 below shows an example layout for the application pcb . the effective area of the v+ top - layer copper plan e is ~ 3cm2 in this example. for an fr4 pcb with 1oz copper, r th(j -a) is about 40 c/w. a lower r th(j -a) can be achieved using thicker copper and/or additional layers . figure 7 : pcb layout example and corresponding thermal image ( 1 6khz, 2p, 1 oz, ?tca=70c, v+ = 320v, iu = 417marms, po = 93 w) at the module?s typical operating conditions, dv/dt of the phase node voltage is influenced by the load capacitance which includes parasitic capacitance of th e pcb, mosfet output capacitance an d motor winding capacitance. to turn off the mosfet, the load capacitance needs to be charged by the phase current. for the irmcs1171 reference design, t urn - off d v /dt ranges from 2 to 5 v/ns depending on the phase current magnitude. turn - on dv /dt is influe nced by pcb parasitic capacitance and motor winding capacitance and typically ranges from 4 to 6 v/ns. the mosfet turn - on loss combined with the complimentary bod y diode reverse recovery loss comprises the majority of the total switching losses. two - phase modulation can be used to reduce switching losses and run the module at higher phase currents . m odule
irsm836 - 045ma 15 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 37l package outline irsm836 - 045ma (bottom view) dimensions in mm
irsm836 - 045ma 16 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 37l package outline irsm836 - 045ma (bottom view ) dimensions in mm
irsm836 - 045ma 17 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 37l package outline irsm836 - 045ma (top and side view)
irsm836 - 045ma 18 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 top marking part number international rectifier logo irsm 836 - 045 ma ? yww ? lot code marking code ( per marking spec .) ( prod mode - 4 digits spn code ) pin 1 identifier date code xxxxx assembly site code per scop 200 - 002
irsm836 - 045ma 19 www.irf.com ? 20 13 international rectifier f ebruary 3 , 2013 revision history january 18 , 201 3 formatting corrections; corrected package drawings ; added notes about what pins are internally connected; updated ordering table stating all parts are pbf. data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252 - 7105 tac fax: (310) 252 - 7903 visit us at www.irf.com for sales contact information

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